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EIA JESD 24-2:1991 (R2002)

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EIA JESD 24-2:1991 (R2002)

Gate Charge Test Method

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This addendum establishes a method for measuring power device gate charge. A gate charge test is performed by driving the device gate with a constant current and measuring the resulting gate voltage response. Constant gate current scales the gate voltage, a function of time, to a function of coulombs. The slope of the generated response reflects the active device capacitance as it varies during the switching transition . Gate charge measurements are useful for characterizing the large signal switching performance of power MOS and IGBT devices. Developed over a four year span by the JEDEC JC-25 Committee, the method defines a repeatable means of measuring the widely published Qgd charge values.

Author EIA
Editor EIA
Document type Standard
Format File
Confirmation date 2002-10-01
ICS 31.080.01 : Semiconductor devices in general
Number of pages 14
Modify EIA JESD 24 (1985)
Year 1990
Document history
Country USA
Keyword EIA JESD 24;EIA 24;EIA 24.2;24;EIA JESD24-2