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EIA JESD 24-6:1991 (R2002)
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EIA JESD 24-6:1991 (R2002)
Thermal Impedance Measurements for Insulated Gate Bipolar TransistorsMore info
This standard describes in detail the method for thermal measurements of Insulated Gate Bipolar Transistors (IGBTs) and is suitable for use both in manufacturing and application of the devices. The method covers both thermal transient and thermal equilibrium measurements for manufacturing process control and device characterization purposes. Properly implemented, JESD24-6 provides a basis for obtaining realistic thermal parametric values that will benefit supplier's internal effectiveness and will be useful to the design and manufacturer of reliable IGBT circuits.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2002-10-01 |
| ICS | 31.080.30 : Transistors
|
| Number of pages | 20 |
| Modify | EIA JESD 24 (1985)
|
| Year | 1990 |
| Document history | |
| Country | USA |
| Keyword | EIA JESD 24;EIA 24;EIA 24.6;24;EIA JESD24-6 |