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Defines methods for verifying the diode recovery stress capability of power transistors.
Author | EIA |
---|---|
Editor | EIA |
Document type | Standard |
Format | File |
Confirmation date | 2002-10-01 |
ICS | 31.080.10 : Diodes
31.080.30 : Transistors |
Number of pages | 12 |
Modify | EIA JESD 24 (1985)
|
Year | 1990 |
Document history | |
Country | USA |
Keyword | EIA JESD 24;EIA 24;EIA 24.7;24;EIA JESD24-7 |