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EIA JESD 51-14:2010

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EIA JESD 51-14:2010

Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path

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This document specifies a test method (referred to herein as 'Transient Dual Interface Measurement') to determine the conductive thermal resistance 'Junction-to-Case' R?JC (?JC) of semiconductor devices with a heat flow through a single path, i.e. semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink. The thermal resistance measured using this document is R?JCx or ?JCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side.

Author EIA
Editor EIA
Document type Standard
Format File
ICS 31.080.01 : Semiconductor devices in general
Number of pages 46
Year 2010
Document history
Country USA
Keyword EIA JESD 51;EIA 51;EIA 51.14;51;EIA JESD51-14