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This document specifies a test method (referred to herein as 'Transient Dual Interface Measurement') to determine the conductive thermal resistance 'Junction-to-Case' R?JC (?JC) of semiconductor devices with a heat flow through a single path, i.e. semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink. The thermal resistance measured using this document is R?JCx or ?JCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side.
Author | EIA |
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Editor | EIA |
Document type | Standard |
Format | File |
ICS | 31.080.01 : Semiconductor devices in general
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Number of pages | 46 |
Year | 2010 |
Document history | |
Country | USA |
Keyword | EIA JESD 51;EIA 51;EIA 51.14;51;EIA JESD51-14 |